Products

Manufacturing devices capable of producing single crystals using the Bridgeman method.

Barium borate (BaB2O4) single crystal is a useful nonlinear material used in broad spectral ranges that modifies the frequency of the fundamental laser light through second-fifth harmonic generation. It has a high distortion threshold (at 1064 nm, >10 GW/cm2 for 1.3 ns).

Mono Crystal Technologies supplies Germanium Ge single crystals for use in optics and electronics. Germanium sulfide (GeS) single crystals, with a band gap of around 1.65 eV (751 nm), are widely used in industry.

Mono Crystal Technologies supplies Gallium Selenide (GaSe) single crystals for use in optics and electronics. It has a band gap of approximately 2.0 eV (619 nm) and high photoluminescence.

Mono Crystal Technologies supplies Cadmium Zinc Telluride (CZT) single crystals for use in optics and electronics. The band gap is approximately 1.4-2.2 eV (885-563 nm) depending on the composition.

Mono Crystal Technologies supplies Thallium Gallium Sulfide (TlGaS2) single crystals for your electro-optical applications needs. The band gap is approximately 2.45 eV (506 nm).

Mono Crystal Technologies supplies Gallium Sulfide (GaS) single crystals for use in optics and electronics. The band gap is approximately 2.5 eV (496 nm).

Mono Crystal Technologies supplies Tin Telluride (SnTe) single crystals for use in optics and electronics. The band gap is approximately 0.18 eV (6888 nm).

Mono Crystal Technologies supplies Indium Telluride (InTe) single crystals for use in optics and electronics.

Mono Crystal Technologies supplies Thallium Indium Sulfide (TlInS2) single crystals for your electro-optical applications. Its band gap is approximately 2.1 eV (590 nm).

Mono Crystal Technologies supplies Thallium Indium Selenide (TlInSe2) single crystals for your electro-optical applications needs. The band gap is approximately 2.3 eV (539 nm).

We supply Gallium Sulfide Selenide (GaSSe) single crystals, which exhibit high luminescence properties and are used in electronics and scientific research.

We supply Gallium Arsenide (GaAs) crystals for your needs. It is the second most widely used semiconductor material after silicon, with a band gap of around 1.43 eV (760 nm).

Its band gap is around 1.65 eV (730 nm), and it exhibits high photoluminescence. Therefore, it is ideal for use in R&D activities and electronic applications.

Mono Crystal Technologies supplies Cadmium Telluride (CdTe) single crystals for use in optics and electronics. The band gap is approximately 1.5 eV (827 nm).

Mono Crystal Technologies supplies Lead Telluride (PbTe) single crystals, a thermoelectric material with low thermal conductivity. Its band gap is approximately 0.32 eV (3874 nm).